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Important chalcogenide semiconductor that can be induced for phase change in nano-second time scale, used for next generation non-volatile memory chip applications.
Composition | S(tailored to required atomic ratio) |
Purity | 99.99% |
Density | 4.3g/cm3(varies with composition) |
Dimension | 50.8mm - 440mm |
Tolerance | diameter: ±0.1mm, thickness: ±0.1mm |
Surface Roughness | 32RMS |
Notice:the company is able to provide custom-made sputtering targets and compound materials based on the customers' specific requirements in density, composition and dimensions.